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SKP10N60A SKW10N60A
Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
* 75% lower Eoff compared to previous generation combined with low conduction losses * Short circuit withstand time - 10 s * Designed for: - Motor controls - Inverter * NPT-Technology for 600V applications offers: - very tight parameter distribution - high ruggedness, temperature stable behaviour - parallel switching capability PG-TO-220-3-1 * Very soft, fast recovery anti-parallel EmCon diode * Pb-free lead plating; RoHS compliant * Qualified according to JEDEC1 for target applications * Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type SKP10N60A SKW10N60A Maximum Ratings Parameter Collector-emitter voltage DC collector current TC = 25C TC = 100C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 600V, Tj 150C Diode forward current TC = 25C TC = 100C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time Power dissipation TC = 25C Operating junction and storage temperature Soldering temperature wavesoldering, 1.6 mm (0.063 in.) from case for 10s Tj , Tstg Ts
2
C
G
E
PG-TO-247-3
VCE 600V 600V
IC 10A 10A
VCE(sat) 2.3V 2.3V
Tj 150C 150C
Marking
Package
K10N60 PG-TO-220-3-1 K10N60 PG-TO-247-3
Symbol VCE IC
Value 600 20 10.6
Unit V A
ICpuls IF
40 40
21 10 IFpuls VGE tSC Ptot 42 20 10 92 -55...+150 260 V s W C C
VGE = 15V, VCC 600V, Tj 150C
1 2
J-STD-020 and JESD-022 Allowed number of short circuits: <1000; time between short circuits: >1s. 1 Rev. 2.3 Sep 08
SKP10N60A SKW10N60A
Thermal Resistance Parameter Characteristic IGBT thermal resistance, junction - case Diode thermal resistance, junction - case Thermal resistance, junction - ambient RthJA PG-TO-220-3-1 PG-TO-247-3-21 62 40 RthJCD 2.4 RthJC 1.35 K/W Symbol Conditions Max. Value Unit
Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Static Characteristic Collector-emitter breakdown voltage Collector-emitter saturation voltage V ( B R ) C E S V G E = 0 V , I C =500 A VCE(sat) V G E = 15 V, I C =10A T j = 25C T j = 150 C Diode forward voltage VF VGE=0V, IF=10A T j = 25C T j = 150 C Gate-emitter threshold voltage Zero gate voltage collector current VGE(th) ICES I C =300 A,V C E =V G E V C E = 60 0 V,V G E = 0 V T j = 25C T j = 150 C Gate-emitter leakage current Transconductance Dynamic Characteristic Input capacitance Output capacitance Reverse transfer capacitance Gate charge Internal emitter inductance measured 5mm (0.197 in.) from case Short circuit collector current
2)
Symbol
Conditions
Value min. 600 1.7 1.2 3 Typ. 2 2.3 1.4 1.25 4 6.7 550 62 42 52 7 13 100 max. 2.4 2.8 1.8 1.65 5
Unit
V
A 40 1500 100 660 75 51 68 A nC nH nA S pF
IGES gfs Ciss Coss Crss QGate LE IC(SC)
V C E = 0 V , V G E =20V V C E =20V, I C =10A V C E =25V, VGE=0V, f=1MHz V C C = 48 0 V, I C =10A V G E =15V PG- TO- 220- 3-1 PG- TO- 247- 3-21 V G E =15V,t S C 1 0 s V C C 60 0V, T j 150 C
2)
Allowed number of short circuits: <1000; time between short circuits: >1s.
2
Rev. 2.3
Sep 08
SKP10N60A SKW10N60A
Switching Characteristic, Inductive Load, at Tj=25 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm dirr/dt T j = 25C , V R = 20 0 V , I F =10A, d i F /d t= 200A/s 220 20 200 310 4.5 180 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j = 25C , V C C = 40 0 V, I C =10A, V G E = 0 /1 5 V, R G = 2 5 , L 1 ) =1 80nH, C 1 ) =55pF Energy losses include "tail" and diode reverse recovery. 28 12 178 24 0.15 0.17 0.320 34 15 214 29 0.173 0.221 0.394 mJ ns Symbol Conditions Value min. typ. max. Unit
Switching Characteristic, Inductive Load, at Tj=150 C Parameter IGBT Characteristic Turn-on delay time Rise time Turn-off delay time Fall time Turn-on energy Turn-off energy Total switching energy Anti-Parallel Diode Characteristic Diode reverse recovery time trr tS tF Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery current during t b Qrr Irrm dirr/dt T j = 150 C V R = 20 0 V , I F =10A, d i F /d t= 200A/s 350 36 314 690 6.3 200 nC A A/s ns td(on) tr td(off) tf Eon Eoff Ets T j = 150 C V C C = 40 0 V, I C =10A, V G E = 0 /1 5 V, R G = 2 5 L 1 ) =1 80nH, C 1 ) =55pF Energy losses include "tail" and diode reverse recovery. 28 12 198 26 0.260 0.280 0.540 34 15 238 32 0.299 0.364 0.663 mJ ns Symbol Conditions Value min. typ. max. Unit
1)
Leakage inductance L a nd Stray capacity C due to dynamic test circuit in Figure E. 3 Rev. 2.3 Sep 08
SKP10N60A SKW10N60A
50A T C =80c
IC, COLLECTOR CURRENT IC, COLLECTOR CURRENT
Ic
t p = 5 s
40A 30A 20A 10A T C =110c
10A
1 5 s 5 0 s
1A
2 0 0 s 1m s DC
1V 10V 100V 1000V
Ic
0 ,1 A
0A 10H z
100H z
1kH z
10kH z 100kH z
f, SWITCHING FREQUENCY Figure 1. Collector current as a function of switching frequency (Tj 150C, D = 0.5, VCE = 400V, VGE = 0/+15V, RG = 25)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0, TC = 25C, Tj 150C)
120W
25A
100W
20A
80W
IC, COLLECTOR CURRENT
POWER DISSIPATION
15A
60W
10A
40W
Ptot,
20W
5A
0W 25C
50 C
75C
100 C
125C
0A 2 5 C
5 0 C
7 5 C
1 0 0 C
1 2 5 C
TC, CASE TEMPERATURE Figure 3. Power dissipation as a function of case temperature (Tj 150C)
TC, CASE TEMPERATURE Figure 4. Collector current as a function of case temperature (VGE 15V, Tj 150C)
4
Rev. 2.3
Sep 08
SKP10N60A SKW10N60A
35A 30A
35A 30A
IC, COLLECTOR CURRENT
25A V GE=20V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V
IC, COLLECTOR CURRENT
25A V GE=20V 20A 15A 10A 5A 0A 0V 15V 13V 11V 9V 7V 5V
1V
2V
3V
4V
5V
1V
2V
3V
4V
5V
VCE, COLLECTOR-EMITTER VOLTAGE Figure 5. Typical output characteristics (Tj = 25C)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 6. Typical output characteristics (Tj = 150C)
VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE
35A 30A
3 ,5 V
T j=+25C +150C
IC = 2 0 A
3 ,0 V
IC, COLLECTOR CURRENT
25A 20A 15A 10A 5A 0A 0V
2 ,5 V
IC = 1 0 A
2 ,0 V
IC = 5 A
2V
4V
6V
8V
10V
1 ,5 V 0 C
5 0 C
1 0 0 C
1 5 0 C
VGE, GATE-EMITTER VOLTAGE Figure 7. Typical transfer characteristics (VCE = 10V)
Tj, JUNCTION TEMPERATURE Figure 8. Typical collector-emitter saturation voltage as a function of junction temperature (VGE = 15V)
5
Rev. 2.3
Sep 08
SKP10N60A SKW10N60A
t d (o ff)
t, SWITCHING TIMES
100ns
t, SWITCHING TIMES
100ns
t d (o ff)
tf t d (o n ) tr
10ns 0A
tf t d (o n )
10ns 0
tr
20 40 60 80
5A
10A
15A
20A
25A
IC, COLLECTOR CURRENT Figure 9. Typical switching times as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 2 5 , Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical switching times as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E)
5,5V
VGE(th), GATE-EMITTER THRESHOLD VOLTAGE
5,0V 4,5V 4,0V 3,5V 3,0V 2,5V 2,0V 1,5V 1,0V -50C 0C 50C 100C 150C m in. typ. m ax.
t d(off)
t, SWITCHING TIMES
100ns
t d(on) tf tr
50C 100C 150C
10ns 0C
Tj, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 25 , Dynamic test circuit in Figure E)
Tj, JUNCTION TEMPERATURE Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.3mA)
6
Rev. 2.3
Sep 08
SKP10N60A SKW10N60A
1,6m J 1,4m J
*) Eon and Ets include losses due to diode recovery.
1 ,0m J
*) Eon and Ets include losses due to diode recovery.
E ts *
E, SWITCHING ENERGY LOSSES
1,2m J 1,0m J 0,8m J 0,6m J 0,4m J 0,2m J 0,0m J 0A
E, SWITCHING ENERGY LOSSES
E ts *
0 ,8m J
E on* E o ff
0 ,6m J
E o ff
0 ,4m J
E on*
5A
10A
15A
20A
25A
0 ,2m J 0
20
4 0
60
8 0
IC, COLLECTOR CURRENT Figure 13. Typical switching energy losses as a function of collector current (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, RG = 2 5 , Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 14. Typical switching energy losses as a function of gate resistor (inductive load, Tj = 150C, VCE = 400V, VGE = 0/+15V, IC = 10A, Dynamic test circuit in Figure E)
0,8mJ
*) Eon and Ets include losses due to diode recovery.
10 K/W
0
ZthJC, TRANSIENT THERMAL IMPEDANCE
D=0.5 0.2 10 K/W
-1
E, SWITCHING ENERGY LOSSES
0,6mJ
0.1 0.05 0.02
0,4mJ
Ets*
0,2mJ
R,(K/W) 0.4287 0.4830 0.4383
R1
, (s) 0.0358 -3 4.3*10 -4 3.46*10
R2
-2 10 K/W 0.01
E off E on*
C 1 = 1 /R 1 C 2 = 2 /R 2
single pulse 10 K/W 1s
-3
0,0mJ 0C
50C
100C
150C
10s
100s
1m s
10m s 100m s
1s
Tj, JUNCTION TEMPERATURE Figure 15. Typical switching energy losses as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/+15V, IC = 10A, RG = 25 , Dynamic test circuit in Figure E)
tp, PULSE WIDTH Figure 16. IGBT transient thermal impedance as a function of pulse width (D = tp / T)
7
Rev. 2.3
Sep 08
SKP10N60A SKW10N60A
25V
1nF C iss
20V
VGE, GATE-EMITTER VOLTAGE
15V
120V 480V
C, CAPACITANCE
100pF C o ss C rss
10V
5V
0V 0nC
25nC
50nC
75nC
10pF 0V
10V
20V
30V
QGE, GATE CHARGE Figure 17. Typical gate charge (IC = 10A)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 18. Typical capacitance as a function of collector-emitter voltage (VGE = 0V, f = 1MHz)
25 s
200A
20 s
IC(sc), SHORT CIRCUIT COLLECTOR CURRENT
tsc, SHORT CIRCUIT WITHSTAND TIME
150A
15 s
100A
10 s
50A
5 s
0 s 10V
11V
12V
13V
14V
15V
0A 10V
12V
14V
16V
18V
20V
VGE, GATE-EMITTER VOLTAGE Figure 19. Short circuit withstand time as a function of gate-emitter voltage (VCE = 600V, start at Tj = 25C)
VGE, GATE-EMITTER VOLTAGE Figure 20. Typical short circuit collector current as a function of gate-emitter voltage (VCE 600V, Tj = 150C)
8
Rev. 2.3
Sep 08
SKP10N60A SKW10N60A
500ns
1400nC 1200nC
Qrr, REVERSE RECOVERY CHARGE
400ns
trr, REVERSE RECOVERY TIME
I F = 2 0A
1000nC
300ns
I F = 20A
800nC
I F = 10 A
200ns
600nC
I F = 10A I F = 5A
IF = 5 A
400nC
100ns
200nC
0ns 100A /s 300A /s 500A/s 700A/s 900A/s
0nC 100A /s 300A /s 500A /s 700A /s 900A /s
d i F /d t, DIODE CURRENT SLOPE Figure 21. Typical reverse recovery time as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
d i F /d t, DIODE CURRENT SLOPE Figure 22. Typical reverse recovery charge as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
20A
1 0 00 A /s
12A
IF = 2 0 A IF = 1 0 A IF = 5 A
DIODE PEAK RATE OF FALL OF REVERSE RECOVERY CURRENT
Irr, REVERSE RECOVERY CURRENT
16A
8 00 A /s
6 00 A /s
8A
4 00 A /s
4A
d i r r / d t,
2 00 A /s
0A 1 0 0 A /s 3 0 0 A /s 5 0 0 A /s 7 0 0 A /s 9 0 0 A /s
0 A /s 1 0 0A /s
3 00 A /s
50 0A /s
7 00 A /s
90 0 A /s
d i F /d t, DIODE CURRENT SLOPE Figure 23. Typical reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
diF/dt, DIODE CURRENT SLOPE Figure 24. Typical diode peak rate of fall of reverse recovery current as a function of diode current slope (VR = 200V, Tj = 125C, Dynamic test circuit in Figure E)
9
Rev. 2.3
Sep 08
SKP10N60A SKW10N60A
20A
2.0V
I F = 20A
15A
150C 10A 100C
VF, FORWARD VOLTAGE
IF, FORWARD CURRENT
1.5V
I F = 10A
5A
25C -55C
0A 0.0V
1.0V
0.5V
1.0V
1.5V
2.0V
-40C
0C
40C
80C
120C
VF, FORWARD VOLTAGE Figure 25. Typical diode forward current as a function of forward voltage
Tj, JUNCTION TEMPERATURE Figure 26. Typical diode forward voltage as a function of junction temperature
ZthJCD, TRANSIENT THERMAL IMPEDANCE
D=0.5 10 K/W 0.2 0.1 0.05 10 K/W 0.02
-1 0
R,(K/W) 0.759 0.481 0.609 0.551
0.01
R1
, (s) -2 5.53*10 -3 4.28*10 -4 4.83*10 -5 5.77*10
R2
single pulse 10 K/W 1s
-2
C 1 = 1 /R 1 C 2 = 2 /R 2
10s
100s
1ms
10ms 100ms
1s
tp, PULSE WIDTH Figure 27. Diode transient thermal impedance as a function of pulse width (D = tp / T)
10
Rev. 2.3
Sep 08
SKP10N60A SKW10N60A
PG-TO220-3-1
11
Rev. 2.3
Sep 08
SKP10N60A SKW10N60A
PG-TO247-3
M
M
MIN 4.90 2.27 1.85 1.07 1.90 1.90 2.87 2.87 0.55 20.82 16.25 1.05 15.70 13.10 3.68 1.68 5.44 3 19.80 4.17 3.50 5.49 6.04
MAX 5.16 2.53 2.11 1.33 2.41 2.16 3.38 3.13 0.68 21.10 17.65 1.35 16.03 14.15 5.10 2.60
MIN 0.193 0.089 0.073 0.042 0.075 0.075 0.113 0.113 0.022 0.820 0.640 0.041 0.618 0.516 0.145 0.066 0.214 3
MAX 0.203 0.099 0.083 0.052 0.095 0.085 0.133 0.123 0.027 0.831 0.695 0.053 0.631 0.557 0.201 0.102
Z8B00003327 0
0
55 7.5mm
20.31 4.47 3.70 6.00 6.30
0.780 0.164 0.138 0.216 0.238
0.799 0.176 0.146 0.236 0.248
17-12-2007 03
12
Rev. 2.3
Sep 08
SKP10N60A SKW10N60A
i,v diF /dt tr r =tS +tF Qr r =QS +QF IF tS QS tr r tF 10% Ir r m t VR
Ir r m
QF
dir r /dt 90% Ir r m
Figure C. Definition of diodes switching characteristics
1
Tj (t) p(t)
r1
r2
2
n
rn
r1
r2
rn
Figure A. Definition of switching times
TC
Figure D. Thermal equivalent circuit
Figure B. Definition of switching losses
Figure E. Dynamic test circuit Leakage inductance L =180nH a nd Stray capacity C =55pF.
Published by Infineon Technologies AG,
13
Rev. 2.3
Sep 08
SKP10N60A SKW10N60A
Published by Infineon Technologies AG 81726 Munich, Germany (c) 2008 Infineon Technologies AG All Rights Reserved.
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Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
14
Rev. 2.3
Sep 08

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